Search results for "Fluorinated tin oxide"
showing 2 items of 2 documents
Carrier transport mechanism in the SnO(2):F/p-type a-Si:H heterojunction
2011
We characterize SnO(2):F/p-type a-Si:H/Mo structures by current-voltage (I-V) and capacitance-voltage (C-V) measurements at different temperatures to determine the transport mechanism in the SnO2:F/p-type a-Si:H heterojunction. The experimental I-V curves of these structures, almost symmetric around the origin, are ohmic for vertical bar V vertical bar< 0:1 V and have a super-linear behavior (power law) for vertical bar V vertical bar < 0:1 V. The structure can be modeled as two diodes back to back connected so that the main current transport mechanisms are due to the reverse current of the diodes. To explain the measured C-V curves, the capacitance of the heterostructure is modeled as the …
Correlated effects of fluorine and hydrogen in fluorinated tin oxide (FTO) transparent electrodes deposited by sputtering at room temperature
2021
The optical and electrical properties of fluorinated tin oxide (FTO) films deposited at room temperature by sputtering have been investigated varying the fluorine content and the hydrogen atmosphere. The complex behavior of the obtained films is disclosed using a wide set of characterization techniques that reveals the combined effects of these two parameters on the generated defects. These defects control the electrical transport (carrier density, mobility and conductivity), the optical properties (band gap and defects-related absorption and photoluminescence) and finally promote the amorphization of the samples. H2 in the sputtering gas does not modify the H content in the films but induc…